Consumable part for use in a plasma processing apparatus

ABSTRACT

A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/524,895, filed Jun. 15, 2012, which is a continuation of U.S. patentapplication Ser. No. 12/813,819, filed Jun. 11, 2010, now U.S. Pat. No.8,221,579, issued Jul. 17, 2012, and which further claims the benefit ofthe priority to Japanese Patent Application No. 2009-141317, filed onJun. 12, 2009 and U.S. Provisional Application No. 61/228,642, filedJul. 27, 2009, the entire contents of each of which are incorporatedherein by reference.

FIELD OF THE INVENTION

The present invention relates to a method of reusing a consumable partfor use in a plasma processing apparatus.

BACKGROUND OF THE INVENTION

A plasma processing apparatus, which performs a predetermined plasmaprocess on a substrate, e.g., a wafer, includes a chamber serving as adepressurized chamber for accommodating the wafer therein; a shower headthrough which a processing gas is introduced into the chamber; and asusceptor arranged in the chamber to face the shower head, the waferbeing mounted on the susceptor and a high frequency power being suppliedin the chamber through the susceptor. The processing gas introduced intothe chamber is excited by the high frequency power to be converted to aplasma.

The susceptor includes a ring-shaped focus ring which surrounds aperiphery of the mounted wafer. The focus ring is made of silicon (Si)like the wafer. In the chamber, a distribution region of plasma isextended to above the focus ring from above the wafer and a density ofplasma at a peripheral portion of the wafer is maintained to besubstantially identical to that at a center portion of the wafer.Accordingly, it is possible to allow the plasma process to be uniformlyperformed over the entire surface of the wafer W (see, e.g., JapanesePatent Application Publication No. 2005-064460 and corresponding U.S.Patent Application Publication No. 2004/0261946 A1).

During the plasma process, the focus ring is sputtered and eroded bypositive ions of the plasma. If the focus ring is eroded, a top surfaceof the focus ring becomes lower than the top surface of the wafer, whichresults in an ununiform distribution of plasma on the wafer. Itresultantly becomes difficult to perform the plasma process uniformlyover the entire surface of the wafer W. Accordingly, the focus ring thathas been eroded to a certain degree is required to be replaced. Thereplaced focus ring is disused.

In the meantime, the plasma processing apparatus includes otherconsumable parts made of silicon in addition to the focus ring. Theconsumable parts having an influence on the plasma process, which havebeen eroded to a certain degree, are required to be replaced like theeroded focus ring. The replaced consumable parts are also disused.

Such a consumable part made of silicon, such as the focus ring, ismanufactured by cutting a silicon lump (bulk material), which requires along manufacturing time. Accordingly, it may be a waste to scrap theconsumable part that has been eroded to a certain degree.

SUMMARY OF THE INVENTION

In view of the above, the present invention provides a method of reusinga consumable part used in a plasma processing apparatus to reduce awaste.

In accordance with an embodiment of the present invention, there isprovided a method of reusing a consumable part used in a plasmaprocessing apparatus. The method includes forming a silicon carbide(SiC) lump by depositing SiC by chemical vapor deposition (CVD);manufacturing a consumable part used in the plasma processing apparatusby processing the SiC lump, the consumable part having a predeterminedshape; firstly performing a plasma process on a substrate by using themanufactured consumable part; cleaning a surface of the consumable partthat has been eroded by the plasma process performed for a specificperiod of time; depositing SiC on the cleaned surface of the erodedconsumable part by CVD; remanufacturing a consumable part having thepredetermined shape by processing the eroded consumable part having thesurface on which the SiC is deposited; and secondly performing a plasmaprocess on a substrate by using the remanufactured consumable part.

In accordance with another embodiment of the present invention, there isprovided a method of reusing a consumable part used in a plasmaprocessing apparatus. The method includes firstly performing a plasmaprocess on a substrate by using a consumable part made of SiC; cleaninga surface of the consumable part that has been eroded by the plasmaprocess performed for a specific period of time; depositing SiC on thecleaned surface of the eroded consumable part by CVD; remanufacturing aconsumable part having the predetermined shape by processing the erodedconsumable part having the surface on which the SiC is deposited; andsecondly performing a plasma process on a substrate by using theremanufactured consumable part.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects and features of the present invention will become apparentfrom the following description of embodiments, given in conjunction withthe accompanying drawings, in which:

FIG. 1 is a cross sectional view schematically showing a configurationof a plasma processing apparatus including a consumable part to which areusing method in accordance with an embodiment of the present inventionis applied;

FIGS. 2A and 2B are enlarged views of a focus ring shown in FIG. 1,wherein FIG. 2A is a top view and FIG. 2B is a cross sectional viewtaken along line II-II of FIG. 2A;

FIGS. 3A and 3B are enlarged views showing an upper electrode plateshown in FIG. 1, wherein FIG. 3A is a top view and FIG. 3B is a crosssectional view taken along line III-III of FIG. 3A;

FIGS. 4A to 4F show a process of reusing a focus ring;

FIGS. 5A to 5F show a process of reusing an upper electrode plate.

FIG. 6 is a schematic plan view showing a rectangular test piece havingboundary between a first and a second-deposited CVD-SiC layer; and

FIG. 7 shows a focus ring that is excessively eroded beyond a thicknessof a SiC layer deposited by CVD.

DETAILED DESCRIPTION OF THE EMBODIMENTS

An embodiment of the present invention will now be described withreference to the accompanying drawings which form a part hereof.

FIG. 1 is a cross sectional view schematically showing a configurationof a plasma processing apparatus 10 including a consumable part to whicha reusing method in accordance with the embodiment of the presentinvention is applied. The plasma processing apparatus 10 performs aplasma etching process on a semiconductor device wafer W as a substrate(hereinafter, simply referred to as “wafer”).

Referring to FIG. 1, the plasma processing apparatus 10 includes achamber 11 for accommodating therein the wafer W having a diameter of,e.g., 300 mm; and a cylindrical susceptor 12 arranged in the chamber 11to mount the wafer W thereon. The plasma processing apparatus 10 furtherincludes a side exhaust passageway 13 defined between an inner wall ofthe chamber 11 and a side surface of the susceptor 12. A gas exhaustplate 14 is arranged in the side exhaust passageway 13.

The gas exhaust plate 14 includes a plate shaped member having aplurality of through holes and serves as a partition plate forseparating an upper portion of the inside of the chamber 11 from a lowerportion thereof. A plasma is generated in the upper portion(hereinafter, referred to as “processing space” 15) in the chamber 11partitioned by the gas exhaust plate 14 as will be described later.Further, the lower portion (hereinafter, referred to as “gas exhaustspace (manifold)” 16) in the chamber 11 is connected to a gas exhaustline 17 through which a gas in the chamber 11 is exhausted. The gasexhaust plate 14 captures or reflects the plasma generated in theprocessing space 15 to prevent the leakage of the plasma into themanifold 16.

A turbo molecular pump (TMP) and a dry pump (DP) (both not shown) areconnected to the gas exhaust line 17 and depressurize the inside of thechamber 11 to a vacuum state. Specifically, the DP reduces the pressureinside the chamber 11 from the atmospheric pressure state to anintermediate vacuum state (e.g., about 1.3×10 Pa (0.1 Torr) or less),and the TMP cooperates with the DP to reduce the pressure inside thechamber 11 from the intermediate vacuum state to a high vacuum state(e.g., about 1.3×10⁻³ Pa (1.0×10⁻⁵ Torr) or less). In the meantime, thepressure inside the chamber 11 is controlled by an adaptive pressurecontrol (APC) valve (not shown).

The susceptor 12 in the chamber 11 is connected to a first highfrequency power supply 18 via a first matching unit (MU) 19 and alsoconnected to a second high frequency power supply 20 via a secondmatching unit (MU) 21. A high frequency power for ion attraction havinga relatively low frequency, e.g., about 2 MHz, is supplied from thefirst high frequency power supply 18 to the susceptor 12. Similarly, ahigh frequency power for plasma generation having a relatively highfrequency, e.g., about 100 MHz, is supplied from the second highfrequency power supply 20 to the susceptor 12. Accordingly, thesusceptor 12 serves as an electrode. Furthermore, the first and thesecond matching unit 19 and 21 reduce reflection of the high frequencypowers from the susceptor 12 to maximize the supply efficiency of thehigh frequency powers to the susceptor 12.

An electrostatic chuck 23 having therein an electrostatic electrodeplate 22 is disposed on the susceptor 12. The electrostatic chuck 23 isconfigured by stacking an upper circular plate-shaped member on a lowercircular plate-shaped member, wherein a diameter of the upper circularplate-shaped member is smaller than that of the lower circularplate-shaped member. Accordingly, a stepped portion is provided at aperipheral portion of the electrostatic chuck 23. In the meantime, theupper and the lower circular plate-shaped member of the electrostaticchuck 23 are made of ceramic.

The electrostatic electrode plate 22 is connected to a DC power supply24. When a positive DC voltage is applied to the electrostatic electrodeplate 22, a negative potential is generated on a surface (hereinafter,referred to as “backside”) of the wafer W which faces the electrostaticchuck 23, and this causes a potential difference between theelectrostatic electrode plate 22 and the backside of the wafer W. By aCoulomb force or a Johnson-Rahbeck force generated due to the potentialdifference, the wafer W is attracted and held on the upper circularplate-shaped member of the electrostatic chuck 23.

In addition, a focus ring 25 is mounted on a horizontal surface of thestepped portion of the electrostatic chuck 23 to surround the wafer Wattracted to and held on the electrostatic chuck 23. The focus ring 25is made of, e.g., silicon carbide (SiC). In other words, since the focusring 25 is made of a semiconductor material, the plasma distributionregion extends to above the focus ring 25 as well as above the wafer W.Accordingly, the density of plasma at a peripheral portion of the waferW can be maintained to be substantially identical to that at a centralportion of the wafer W. This ensures the uniform plasma etching over theentire surface of the wafer W.

An annular coolant passage 26 is provided inside the susceptor 12, theannular coolant passage 26 extending, e.g., in a circumferentialdirection of the susceptor 12. A low-temperature coolant, e.g., coolingwater or Galden (registered trademark), is supplied from a chiller unit(not shown) to the coolant passage 26 via a coolant line 27 to becirculated. The susceptor 12 cooled by the low-temperature coolant coolsthe wafer W and the focus ring 25 through the electrostatic chuck 23.Further, a sheet for improving a thermal conductivity may be provided ona backside of the focus ring 25. Accordingly, heat transfer from thefocus ring 25 to the susceptor 12 is improved. As a result, it ispossible to efficiently cool the focus ring 25.

A plurality of heat transfer gas supply holes 28 opens at a portion(hereinafter, referred to as “attraction surface”) of the upper circularplate-shaped member of the electrostatic chuck 23 on which the wafer Wis attracted and held. The heat transfer gas supply holes 28 areconnected to a heat transfer gas supply unit (not shown) via a heattransfer gas supply line 29. The heat transfer gas supply unit suppliesa heat transfer gas, e.g., helium (He) gas, into a gap between theattraction surface and the backside of the wafer W through the heattransfer gas supply holes 28. The helium gas supplied into the gapbetween the attraction surface and the backside of the wafer Wefficiently transfers heat of the wafer W to the electrostatic chuck 23.

A shower head 30 is provided at a ceiling portion of the chamber 11 soas to face the susceptor 12. The shower head 30 includes an upperelectrode plate 31, a cooling plate 32 that detachably holds the upperelectrode plate 31, and a lid 33 for covering the cooling plate 32. Theupper electrode plate 31 is a circular plate-shaped member having aplurality of gas holes 34 extending therethrough in a thicknessdirection thereof and is made of SiC as a semiconductor material.Moreover, a buffer space 35 is defined inside the cooling plate 32, anda processing gas inlet line 36 is connected to the buffer space 35.

In addition, a DC power supply 37 is connected to the upper electrodeplate 31 of the shower head 30 and applies a negative voltage to theupper electrode plate 31. At this time, the upper electrode plate 31emits secondary electrons to prevent the electron density on the wafer Wfrom decreasing in the processing space 15. The emitted secondaryelectrons flow from the wafer W to a ground electrode (ground ring) 38made of a semiconductor material, e.g., SiC or silicon, the groundelectrode 38 being provided to surround the side surface of thesusceptor 12 in the side exhaust passageway 13.

In the plasma processing apparatus 10, the processing gas supplied fromthe processing gas inlet line 36 to the buffer space 35 is introducedinto the processing space 15 through the gas holes 34, and theintroduced processing gas is excited and converted into a plasma by thehigh frequency power for plasma generation which is supplied from thesecond high frequency power supply 20 to the processing space 15 via thesusceptor 12. Ions in the plasma are attracted toward the wafer W by thehigh frequency power for ion attraction which is supplied from the firsthigh frequency power supply 18 to the susceptor 12, so that the wafer Wis subjected to a plasma etching process.

The operation of components of the above-described plasma processingapparatus 10 is controlled based on a program, corresponding to theplasma etching process, by a CPU of a control unit (not shown) of theplasma processing apparatus 10.

FIGS. 2A and 2B are enlarged views of the focus ring 25 shown in FIG. 1,wherein FIG. 2A is a top view and FIG. 2B is a cross sectional viewtaken along line II-II of FIG. 2A.

Referring to FIGS. 2A and 2B, the focus ring 25 is a ring-shaped memberhaving a stepped portion 25 a at an inner peripheral portion thereof andis formed of a single substance of SiC as described above. The steppedportion 25 a is formed to correspond to the outer peripheral portion ofthe wafer W. When the wafer W is attracted and held on the attractionsurface, a horizontal surface 25 b of the stepped portion 25 a iscovered by the peripheral portion of the wafer W (see FIG. 1), while acorner 25 c of the stepped portion 25 a is not covered by the wafer W.

In the plasma etching process, the corner 25 c and a top surface 25 d ofthe focus ring 25 are exposed to the plasma to be sputtered by positiveions in the plasma.

FIGS. 3A and 3B are enlarged views showing the upper electrode plate 31shown in FIG. 1, wherein FIG. 3A is a top view and FIG. 3B is a crosssectional view taken along line III-III of FIG. 3A

As shown in FIGS. 3A and 3B, the upper electrode plate 31 is formed of acircular plate-shaped member having a thickness of about 10 mm. Theupper electrode plate 31 includes a plurality of gas holes 34 arrangedtherein with an equal pitch, the gas holes 34 extending through theupper electrode plate 31 in a thickness direction thereof. The gas holes34 have a diameter of, e.g., about 0.5 mm and are formed by a machiningprocess using a drill or the like.

When the upper electrode plate 31 is provided as a portion of the showerhead 30 in the plasma processing apparatus 10, a side surface 31 a ofthe upper electrode plate 31 is covered by an annular outer ring 39 madeof, e.g., SiC, quartz, or silicon (see FIG. 1). A bottom surface 31 b ofthe upper electrode plate 31, however, is exposed to the processingspace 15. In other words, in the plasma etching process, the bottomsurface 31 b is exposed to the plasma to be sputtered by positive ionsof the plasma.

As described above, the focus ring 25 and the upper electrode plate 31are eroded by being sputtered by the positive ions. Accordingly, thefocus ring 25 and the upper electrode plate 31 are made of SiC insteadof silicon in the present embodiment. Since SiC can be deposited bychemical vapor deposition (CVD), the eroded focus ring 25 and the erodedupper electrode plate 31 can be restored (remanufactured) to have theiroriginal shapes by the deposition of SiC by CVD, so that they can bereused as will be described later.

Hereinafter, a reusing method of the present embodiment will bedescribed.

FIGS. 4A to 4F show a process of reusing the focus ring 25.

First, a ring-shaped graphite member 40 is provided as a nucleus and SiCis deposited around the ring-shaped graphite member 40 by CVD, tothereby form a ring-shaped SiC lump 41 (FIG. 4A) (SiC lump formingstep). FIG. 4A shows a vertical cross section of the ring-shaped SiClump 41. By CVD, SiC is isotropically deposited on the graphite member40. To obtain the focus ring 25 without including the graphite member 40by cutting the SiC lump 41, the deposition of SiC is continued until thethickness of the SiC lump 41 from the graphite member 40 to the topsurface the SiC lump 41 becomes thicker than that of the focus ring 25.

Then, the focus ring 25 is obtained by cutting the SiC lump 41 such thatthe focus ring does not include the graphite member 40 (FIG. 4B)(consumable part manufacturing step) and the focus ring 25 is mounted onthe susceptor 12 in the plasma processing apparatus 10. Thereafter, ifthe plasma etching process of the wafer W is repeated a predeterminednumber of times in the plasma etching apparatus 10 (first plasmaprocessing step), the focus ring 25 is eroded. As described above, sincethe top surface 25 d and the corner 25 c of the focus ring 25 is notcovered by the wafer W, the top surface 25 d and the corner 25 c areeroded (FIG. 4C).

Then, such an eroded focus ring 25′ is taken out from the plasmaprocessing apparatus 10 and a surface cleaning is performed on thesurface of the eroded focus ring 25′ (surface cleaning step).

The surface cleaning step includes, for example, an alkali cleaningstep, an acid cleaning step, and a pure water ultrasonic cleaning step.Specifically, oil impurities or the like attached on the surface of theeroded focus ring 25′ are first removed by an alkali cleaning with acaustic soda or NaOH solution. Here, the oil impurities may not beremoved by the acid cleaning. Then, an acid cleaning with hydrofluoricacid (HF) or sulfuric acid (H₂SO₄) is performed on the eroded focus ring25′ which has been subjected to the alkali cleaning, so that silica andmetallic impurities or the like which would not removed by the alkalicleaning are removed. Thereafter, the eroded focus ring 25′ istransferred to a water tank filled with pure water and subjected to apure water cleaning by using an ultrasonic wave.

In the surface cleaning step, a pure water cleaning step with or withoutthe ultrasonic wave may be performed before the alkali cleaning step.Further, any one of the alkali, the acid, and the pure water ultrasoniccleaning step or a combination thereof may be performed. At this time,when the liquid chemical is required to be removed in the surfacecleaning step, it is preferable to perform the pure water ultrasoniccleaning step as a final step.

Furthermore, when the eroded focus ring 25′ is significantly polluted,CO₂ or SiC blast, sputtering by a plasma, and/or mechanical polishingmay be performed to improve the cleaning efficiency or reduce thecleaning time. In this case, such steps are preferably performed beforethe alkali, the acid, and/or the pure water ultrasonic cleaning step.

Further, when the sheet for improving the thermal conductivity has beenprovided on the backside of the focus ring 25 as described above, it isnecessary to remove the sheet in the surface cleaning step. Accordingly,in addition to the alkali, the acid, the pure water ultrasonic cleaningand/or the like, a heating treatment for heating the eroded focus ring25′ to, e.g., 300 to 400° C., CO₂ or SiC blast, sputtering by a plasmaand/or the like may be performed to remove the sheet. Alternatively, thesheet may be removed when the alkali cleaning, the acid cleaning or thelike is performed on the surface of the eroded focus ring 25′.

Thereafter, a new SiC lump 42 is formed by depositing SiC by CVD on thesurface of the eroded focus ring 25′ which has been subjected to thesurface cleaning step (FIG. 4D). The deposition of SiC is continueduntil the SiC lump 42 is larger than the focus ring 25 (SiC depositionstep).

Then, a focus ring 25″ is remanufactured by machining the SiC lump 42(FIG. 4E) (consumable part remanufacturing step). Thereafter, asnecessary, the remanufactured focus ring 25″ is placed in ahigh-temperature atmosphere of an annealing furnace and a source gas ofSiC, e.g., a gaseous mixture of a silane-based gas and a carbon-basedgas, is supplied to the annealing furnace. At this time, the source gasis thermally decomposed and attached and solidified on the surface ofthe remanufactured focus ring 25″, thereby forming a SiC thin filmhaving a thickness of several microns (see FIG. 4F) (surface processingstep). The SiC thin film covers a border line 25 e between the SiCportion deposited on the surface of the eroded focus ring 25′ and theeroded focus ring 25′ exposed at the surface of the remanufactured focusring 25″. Accordingly, it is possible to conceal the border line 25 e,thereby making better the outer appearance of the remanufactured focusring 25″. In addition, the surface processing step may be omitted.

Then, the remanufactured focus ring 25″ whose surface is coated with theSiC thin film is mounted on the susceptor 12 in the plasma processingapparatus 10. Thereafter, the plasma etching process performed on thewafer W is repeated a predetermined number of times in the plasmaprocessing apparatus 10 (second plasma processing step).

The steps of performing the surface cleaning step on a surface of theeroded focus ring 25′; forming a new SiC lump 42 (FIG. 4D);remanufacturing a focus ring 25″ (FIG. 4E); coating a SiC thin film on asurface of the remanufactured focus ring 25″ (FIG. 4F); and performingthe plasma etching process on the wafer W after the remanufactured focusring 25″ is mounted, are sequentially repeated.

FIGS. 5A to 5F show a process of reusing the upper electrode plate 31.

Like in the process shown in FIGS. 4A to 4F, SiC is first depositedaround a circular plate-shaped graphite member 43 by CVD, to therebyform a SiC lump 44 (FIG. 5A) (SiC lump forming step). To obtain theupper electrode plate 31 without including the graphite member 43 bycutting the SiC lump 44, the deposition of SiC is continued until thethickness of the SiC lump 44 from the graphite member 43 to the surfacethe SiC lump 44 becomes thicker than that of the upper electrode plate31.

Then, the upper electrode plate 31 is manufactured by cutting the SiClump 44 to obtain a circular plate-shaped member having a predeterminedsize and forming a plurality of gas holes in the circular plate-shapemember (FIG. 5B) (consumable part manufacturing step), and themanufactured upper electrode plate 31 is mounted, as a portion of theshower head 30, in the plasma processing apparatus 10.

Thereafter, if the plasma etching process performed on the wafer W isrepeated a predetermined number of times in the plasma etching apparatus10 (first plasma processing step), the upper electrode plate 31 iseroded. As described above, since the bottom surface 31 b of the upperelectrode plate 31 is not covered by the outer ring 39, the bottomsurface 31 b is eroded (FIG. 5C). On the other hand, since a top surface31 d of the upper electrode plate 31 is brought into contact with thecooling plate 32, the top surface 31 d is not eroded during the plasmaetching process.

Then, such an eroded upper electrode plate 31′ is taken out from theplasma processing apparatus 10 and, similarly to the process shown inFIGS. 4A to 4F, an surface cleaning is performed on the surface of theeroded upper electrode plate 31′ by using, for example, alkali, acid,pure water, or the like (surface cleaning step). Thereafter, a new SiClump 45 is formed by bringing two eroded upper electrode plates 31′ intoclose-contact with each other, with top surfaces thereof contacted witheach other, and depositing SiC on the surface of the closely contactedupper electrode plates 31′ by CVD (FIG. 5D). Similarly, the depositionof SiC is continued until the SiC lump 45 is larger than two upperelectrode plates 31 closely contacted with each other (SiC depositionstep).

Then, an upper electrode plate 31″ is remanufactured by machining theSiC lump 45 (FIG. 5E) (consumable part remanufacturing step).Thereafter, as necessary, a SiC thin film having a thickness of severalmicrons is formed on the surface of the remanufactured upper electrodeplate 31″ in a high-temperature atmosphere by using a source gas of SiC(FIG. 5F) (surface processing step). The SiC thin film covers a borderline 31 c between the SiC portion deposited on the surface of the erodedupper electrode plate 31′ and the eroded upper electrode plate 31′exposed at the surface of the remanufactured upper electrode plate 31″.Accordingly, it is possible to conceal the border line 31 c, therebymaking better the outer appearance of the remanufactured upper electrodeplate 31″. In addition, the surface processing step may be omitted.

Then, the remanufactured upper electrode plate 31″ whose surface iscoated with the SiC thin film is mounted, as a portion of the showerhead 30, in the plasma processing apparatus 10. Thereafter, the plasmaetching process performed on the wafer W is repeated a predeterminednumber of times in the plasma processing apparatus 10 (second plasmaprocessing step).

The steps of performing the surface cleaning step on the surface of theeroded upper electrode plate 31′; forming a new SiC lump 45 (FIG. 5D);remanufacturing an upper electrode plate 31″ (FIG. 5E); coating a SiCthin film on the surface of the remanufactured upper electrode plate 31″(FIG. 5F); and performing the plasma etching process on the wafer Wafter the remanufactured upper electrode plate 31″ is mounted, aresequentially repeated.

In accordance with the methods of reusing the focus ring 25 and theupper electrode plate 31 shown in FIGS. 4A to 5F, the SiC lumps 42 and45 are formed by depositing SiC by CVD on the surfaces of the focus ring25 and the upper electrode plate 31 eroded by the plasma etching processthat is repeated a predetermined number of times; and the focus ring 25″and the upper electrode plate 31″ are remanufactured by machining theSiC lumps 42 and 45, respectively. Accordingly, even when the focus ring25 and the upper electrode plate 31 are eroded, it is possible to reusethe eroded focus ring 25′ and the upper electrode plate 31′ withoutscrapping them, which reduces a waste.

In accordance with the aforementioned reusing methods, the steps ofperforming the surface cleaning on the surface of the eroded focus ring25′ or the eroded upper electrode plate 31′; forming the new SiC lump 42or 45 by CVD; remanufacturing the focus ring 25″ or the upper electrodeplate 31″ by machining; coating the SiC thin film on the surface of theremanufactured focus ring 25″ or the remanufactured upper electrodeplate 31″ as necessary; and performing the plasma etching process on thewafer W after the remanufactured focus ring 25″ or the remanufacturedupper electrode plate 31″ is mounted, are sequentially repeated.Accordingly, it is possible to reuse the focus ring 25 and the upperelectrode plate 31 for a long time, thereby reducing a wasteefficiently.

In addition, in accordance with the above-mentioned reusing methods, thefocus ring 25″ or the upper electrode plate 31″ is remanufactured and,then, the remanufactured focus ring 25″ or the remanufactured upperelectrode plate 31″ is placed in the high-temperature atmosphere and thesource gas of SiC is supplied to the high-temperature atmosphere, beforethe plasma process of a substrate using the remanufactured focus ring25″ or the remanufactured upper electrode plate 31″. Since the sourcegas is thermally decomposed and solidified on the surface of theremanufactured focus ring 25″ or the remanufactured upper electrodeplate 31″, the surface thereof is coated with the thin film of SiC.Accordingly, it is possible to conceal the border line between the SiCportion deposited by CVD and the eroded focus ring 25′ or the erodedupper electrode plate 31′, thereby making better the outer appearance ofthe remanufactured focus ring 25″ or the remanufactured upper electrodeplate 31″.

Further, in accordance with the above-mentioned reusing methods, thesurface cleaning is performed on the surface of the eroded focus ring25′ or the eroded upper electrode plate 31′ before SiC is deposited byCVD. Impurities, attached on the surface of the focus ring 25 or thelike, which are generated by fluorine ions and/or oxygen ions during theplasma etching process can be sufficiently removed therefrom by thesurface cleaning since the impurities has a thickness of about 1 μm.Accordingly, it is possible to efficiently perform the subsequent SiCdeposition by CVD while maintaining the quality of the remanufacturedfocus ring 25″ or the remanufactured upper electrode plate 31″. Inaddition, since the alkali cleaning, the acid cleaning, or the like cansimply be performed, it is possible to easily perform the remanufactureof the focus ring 25″ or the upper electrode plate 31″.

The focus ring 25 and the upper electrode plate 31 are reused by usingthe above-mentioned reusing methods. The focus ring 25 or the upperelectrode plate 31 eroded to a little degree is required to be replaced(for example, the upper electrode plate 31 eroded to, e.g., about 1 to 2mm in a thickness direction is required to be replaced). Under thecircumstance, it is possible to efficiently reduce the waste by reusingthe eroded focus ring 25 or the eroded upper electrode plate 31.

In accordance with the aforementioned reusing methods, the alkalicleaning, the acid cleaning, or the like is performed on the surface ofthe eroded focus ring 25′ or the eroded upper electrode plate 31′.Meanwhile, the sputtering is performed on the surface of the erodedfocus ring 25′ or the eroded upper electrode plate 31′ by using theplasma before the alkali cleaning, the acid cleaning or the like whencopper (Cu) of a Cu wiring layer or the like is etched in the plasmaetching process and, thus, Cu ions are scattered and Cu or a Cu compoundis attached on the surface of the focus ring 25 or the upper electrodeplate 31. Moreover, CO₂ or SiC blast, sputtering by a plasma, and/ormechanical polishing may be performed on the surface of the eroded focusring 25′ or the eroded upper electrode plate 31′ before the alkalicleaning, the acid cleaning or the like when a fluorine-containing gasor an oxygen-containing gas is employed as a processing gas and fluorineions or oxygen ions are injected into the surface layer of the focusring 25 or the upper electrode plate 31 and, thus, impurities are doped.Accordingly, the Cu or the Cu compound attached on the surface or thesurface layer on which the impurities are doped can physically cut awayand, therefore, it is possible to efficiently maintain the quality ofthe remanufactured focus ring 25″ or the remanufactured upper electrodeplate 31″.

Moreover, a high resistance member is allowed to contain someimpurities. Accordingly, if the focus ring 25 or the upper electrodeplate 31 has high resistance, it is sufficient to perform the alkalicleaning, the acid cleaning, or the like on the surface of the focusring 25 or the upper electrode plate 31 without sputtering the surfaceby using the plasma even when impurities are doped on the surface layerthereof.

The above-mentioned reusing method is applied to the focus ring 25 andthe upper electrode plate 31. However, the reusing method can be appliedto consumable parts formed by cutting a SiC lump made by the depositionby CVD. For example, the aforementioned reusing method can be applied tothe ground electrode 38 and the outer ring 39, which are made of SiC.

As described above, the focus ring 25 or the like is formed by cuttingthe SiC lump formed by the deposition by CVD. Alternatively, a SiC lumpmay be formed by providing, e.g., a sintering material of SiC and/orgraphite (carbon) as a nucleus and depositing SiC by CVD and a focusring may be formed by cutting the SiC lump such that the focus ringincludes the sintering material and/or the graphite. However, since thesintering material has coarser grains than those of a member formed bythe deposition by CVD, particles are likely to be sputtered andscattered by the positive ions. Accordingly, when the focus ring or thelike is eroded during the plasma etching process and the sinteringmaterial of SiC is exposed, particles may be generated.

FIG. 7 shows such an above problem, i.e., a focus ring that isexcessively eroded beyond a thickness of a SiC layer deposited by CVD.

As shown in FIG. 7, in a focus ring 70, a top surface 70 a and a corner70 c of a stepped portion which are not covered by the wafer during theplasma etching process are eroded and an SiC layer 72 deposited by CVDin the eroded portion is eroded. Accordingly, the core, e.g., asintering SiC 71 is exposed. As such, if the sintering SiC 71 isexposed, particles are generated and scattered, so that the inside ofthe chamber is contaminated.

The SiC layer 72 deposited by CVD has a thickness, e.g., 100 μm and,thus, the time interval for replacing consumable parts becomes tooshort.

Meanwhile, it is required to stop the plasma etching process immediatelybefore the SiC layer 72 deposited by CVD is completely eroded andreplace the consumable parts in order to efficiently perform the plasmaetching process without generation of the particles caused by theexposure of the core, i.e., the sintering SiC 71. To that end, it isnecessary to accurately manage the timing for replacing the consumableparts, causing a troublesome operation.

Therefore, in case a SiC lump is made by providing a sintering materialof SiC and/or graphite as a nucleus and depositing SiC by CVD and afocus ring is formed by cutting the SiC lump, it is necessary to obtainthe focus ring without including the sintering material of SiC and/orgraphite. In other words, since a focus ring including the sinteringmaterial of SiC and/or the graphite is not adequate for the plasmaetching process, it is required to obtain the focus ring from a SiCportion deposited by CVD.

In accordance with the aforementioned reusing method, the SiC lump isformed by depositing the SiC on the surface of the core by CVD in theSiC lump forming step and the consumable part is manufactured bymachining the SiC lump formed by the SiC lump forming step such that theconsumable part does not include the core in the consumable partmanufacturing step. Accordingly, the core, i.e., the graphite member 40,is not exposed by the erosion. Therefore, even though the consumablepart (remanufactured focus ring 25″) is manufactured by multiplydepositing the CVD-SiC layers, it is possible to prevent particles frombeing generated and thus the inside of chamber from being polluted.

In addition, in accordance with the aforementioned reusing method, sincethe consumable part includes no core, the allowable erosion amountbecomes, e.g., about 5 mm, which is a significantly increased value ascompared with the conventional maximum allowable erosion amount, i.e.,100 μm. Accordingly, the consumable parts can be less frequentlyreplaced. Further, the troublesome control for stopping plasma etchingprocess immediately before the graphite member serving as the core isexposed becomes unnecessary, thereby improving the processingefficiency. Moreover, since no core is included, the shape of theconsumable part is not limited to a specific shape in there-manufacturing process as compared with the conventional consumablepart; and it is possible to variously modify the shape of theremanufactured consumable part, for example, to reduce the diameterthereof, to partially change an angle of an inclined portion thereof,and differently cut an edge portion thereof as compared with the shapeof the consumable part before being eroded, thereby improving the shapeflexibility. For example, it becomes possible to obtain a remanufacturedfocus ring of a thickness of 3 mm by remanufacturing a focus ring havinga thickness of 4 mm; or obtain a remanufactured focus ring of a diameterof 360 mm by remanufacturing a focus ring having a diameter of 380 mm

In the case of conventionally reusing the graphite member 40 serving asthe core, it is required to remove SiC remaining on the surface of thecore. However, in the case of the aforementioned reusing method, itbecomes unnecessary to perform such a removing operation.

In the present embodiments, the substrate to be subjected to the plasmaetching process is not limited to the semiconductor device wafer. Forexample, the substrate may be one of various kinds of substrates, whichcan be used for a flat panel display (FPD) or the like including aliquid crystal display (LCD), a photomask, a CD substrate, a printsubstrate and the like.

In the above-mentioned reusing method, since the erosion of theconsumable parts in the plasma processing step, the deposition of SiC inthe deposition step, and the remanufacture of the consumable parts inthe consumable part remanufacturing step are repeated, theremanufactured focus ring 25″ and the remanufactured upper electrodeplate 31″ have a multi-layer structure in which the SiC layers depositedby CVD (hereinafter, referred to as “CVD-SiC layers”) are successivelydeposited.

It has been confirmed that the consumable parts having the multi-layerstructure in which the CVD-SiC layers are deposited accurately served asthe components of the chamber.

Specifically, a rectangular test piece (FIG. 6) having a boundarybetween a first-deposited CVD-SiC layer and a second-deposited CVD-SiClayer was formed by cutting a bulk sample made by depositing a pluralityof CVD-SiC layers on the surface of a sintering SiC serving as the core.A plasma injection test for injecting a plasma was carried out on thetest piece under predetermined conditions by using the plasma processingapparatus shown in FIG. 1. Then, a profiler was used to examine whetheror not a stepped portion exists between the first and thesecond-deposited CVD-SiC layer.

Here, the plasma injection conditions were as follows. The pressureinside the chamber was 20 mTorr (2.66 Pa); a plasma-generating power of500 W and a bias power of 3000 W were supplied; a gaseous mixture ofC₄F₈ gas (140 sccm), CO gas (40 sccm), and Ar gas (600 sccm) was used asa processing gas for plasma generation; and a plasma injection time was60 sec. Moreover, He gas serving as a heat transfer gas flowing throughthe heat transfer gas supply holes was set to have the pressure of 30Torr (3.99 kPa) at a center portion and 10 Torr (1.33 kPa) at an edgeportion.

After the plasma injection test, there was no stepped portion at theboundary between the first and the second-deposited CVD-SiC layer. As aresult, it was confirmed that the erosion amount in the first-depositedCVD-SiC layer was the substantially same as that in the second-depositedCVD-SiC layer.

Further, it was checked that the surface of the first-deposited CVD-SiClayer had the substantially same state as that of the second-depositedCVD-SiC layer by taking SEM photography for each of the first and thesecond-deposited CVD-SiC layer to observe the states of the surfacesthereof after the plasma injection test. Resultantly, it was seen thatthere was no difference of erosion characteristics between the twolayers.

Next, a reusing rate of the remanufacturing focus ring 25″remanufactured by the reusing method of the focus ring 25 shown in FIG.4 was obtained. Here, the reusing rate indicates a percentage rate ofthe volume of the CVD-SiC layer deposited in the remanufacturingoperation to the total volume of the remanufactured focus ring 25″.

Specifically, the focus ring 25 shown in FIG. 4B before being eroded hadthe volume of, e.g., 147857 mm³, and the eroded focus ring 25′ shown inFIG. 4C had the volume of, e.g., 102087 mm³. Moreover, theremanufactured focus ring 25″ was remanufactured in the remanufacturingoperation to have the same volume as that of the focus ring 25 beforebeing eroded. Accordingly, a reusing rate R is computed by the followingequation.

R=[1−(102087/147857)]×100=31.0%

Physically, the reusing rate R of a focus ring is obtained in the rangebetween 0.1% and 90%. However, the reusing rate R is preferably in therange between 15% to 40%, especially 20% and 35%, in consideration ofthe actual productivity of the plasma etching process.

Next, the plasma etching processes were performed on a TEOS film of asample wafer under the same conditions by using the plasma processingapparatus shown in FIG. 1 employing the remanufactured focus ring (F/R)25″ and the focus ring 25 before being eroded, respectively, to obtainan etching rate (E/R) and the number of particles having the size of 0.1μm or greater attached on the surface of the sample wafer and observe apollution state of the surface of the TEOS film and the effects of theeroded shapes of the two focus ring 25 and 25″.

The results are shown in the following Table 1. The plasma processingconditions were identical to those of the aforementioned plasmainjection test carried out by using the test piece.

TABLE 1 F/R before eroded Remanufactured F/R Before Before eroded Aftereroded eroded After eroded E/R of TEOS 412.9 427.9 414.2 428.8 (μm/min)Particle Within No data Within Within (0.1 μm or greater) PollutionWithin Within

In Table 1, the focus ring 25 had the etching rates of 412.9 and 427.9μm/min before and after being eroded, respectively, and theremanufactured focus ring 25″ had the etching rates of 414.2 and 428.4μm/min before and after being eroded, respectively. Resultantly, therewas no significant difference therebetween. In addition, the numbers ofthe particles attached on the remanufactured focus ring 25″ before andafter being eroded are within the allowable level. Especially, anyadverse effect was not observed.

From the above results, it is seen that, in the aforementioned reusingmethod, no adverse effect exists in the erosion rate between theremanufactured consumable parts and the consumable parts before beingeroded, the surface state thereof after being eroded, the etching ratethereof before and after being eroded, and the atmosphere inside thechamber. Accordingly, there is no problem to use the remanufacturedconsumable parts as parts used inside the chamber.

While the invention has been shown and described with respect to theembodiments, it will be understood by those skilled in the art thatvarious changes and modifications may be made without departing from thescope of the invention as defined in the following claims.

1. A consumable part for reuse in a plasma processing apparatus, theconsumable part comprising: a base portion including a part of a firstsilicon carbide (SiC) formed by depositing SiC by a first chemical vapordeposition (CVD) process, the base portion having been eroded by a firstplasma process performed in the plasma processing apparatus; and aremanufactured portion including a part of a second SiC formed bydepositing SiC by a second CVD process on a surface of the base portion.2. The consumable part of claim 1, wherein the first SiC is formed bydepositing SiC around a core by the first CVD process, the core beingformed of graphite or sintered SiC, and wherein the base portion ismanufactured by machining the first SiC and removing the core such thatthe base portion includes the part of the first SiC but does not includethe core.
 3. The consumable part of claim 1, wherein there is no steppedportion at a boundary between the base portion and the remanufacturedportion.
 4. The consumable part of claim 1, wherein an erosion rate ofthe base portion is identical to an erosion rate of the remanufacturedportion.
 5. A plasma processing apparatus comprising: a chamberconfigured to accommodate therein a substrate; a susceptor configured tomount the substrate; a processing gas introducing unit configured tointroduce a processing gas into the chamber; a plasma generation unitconfigured to generate a plasma of the processing gas in the chamber; aconsumable part arranged in the chamber, wherein the consumable partincludes: a base portion including a part of a first silicon carbide(SiC) formed by depositing SiC by a first chemical vapor deposition(CVD) process, the base portion having been eroded by a first plasmaprocess performed in the plasma processing apparatus; and aremanufactured portion including a part of a second SiC formed bydepositing SiC by a second CVD process on a surface of the base portion.6. The plasma processing apparatus of claim 5, wherein the first SiC isformed by depositing SiC around a core by the first CVD process, thecore being a graphite member or a sintering material of SiC, and whereinthe base portion is manufactured by machining the first SiC such thatthe base portion does not include the core.
 7. The plasma processingapparatus of claim 5, wherein there is no stepped portion at a boundarybetween the base portion and the remanufactured portion.
 8. The plasmaprocessing apparatus of claim 5, wherein an erosion rate of the baseportion is identical to an erosion rate of the remanufactured portion.